Ultrafast growth of submillimeter-scale single-crystal MoSe<sub>2</sub> by pre-alloying CVD-Reference-Cited by-同舟云学术

Ultrafast growth of submillimeter-scale single-crystal MoSe₂ by pre-alloying CVD

Published:2022 Issue:7 Volume:7 Page:743-751
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Xin Xing¹²,Chen Jiamei¹,Zhang Yanmei¹,Chen Mao-Lin³,Bao Youzhe¹,Liu Weizhen¹,Liu Yichun¹,Xu Haiyang¹^ORCID,Ren Wencai²⁴^ORCID

Affiliation:

1. Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China

2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China

3. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 03006, China

4. School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China

Abstract

A pre-alloying CVD method was developed to realize the ultrafast growth (30 s) and non-destructive transfer of submillimeter-scale (560 μm) monolayer single-crystal MoSe2 on Au for the first time.

Funder

Chinese Academy of Sciences

Liaoning Revitalization Talents Program

National Natural Science Foundation of China

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

National Science Fund for Distinguished Young Scholars

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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