SnS2/SnS p–n heterojunctions with an accumulation layer for ultrasensitive room-temperature NO2 detection-Reference-Cited by-同舟云学术

SnS2/SnS p–n heterojunctions with an accumulation layer for ultrasensitive room-temperature NO2 detection

Author:

Sun Quan¹²³⁴,Wang Jiaxin¹²³⁴,Hao Juanyuan¹²³⁴⁵^ORCID,Zheng Shengliang¹²³⁴,Wan Peng¹²³⁴,Wang Tingting¹²³⁴,Fang Haitao¹²³⁴,Wang You¹²³⁴⁵

Affiliation:

1. School of Materials Science and Engineering

2. Harbin Institute of Technology

3. Harbin 150001

4. P. R. China

5. Key Laboratory of Micro-Systems and Micro-Structures Manufacturing

Abstract

SnS₂/SnS p–n heterojunctions with an accumulation layer were rationally designed to achieve ultrasensitive NO₂ detection at room temperature.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Harbin Institute of Technology

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference63 articles.

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