Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal-Reference-Cited by-同舟云学术

Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal

Published:2016 Issue:59 Volume:6 Page:53873-53881
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chandran Achu¹²³⁴⁵,Prakash Jai⁶⁷⁸⁴,Gangwar Jitendra⁵³⁴⁶⁹,Joshi Tilak⁵³⁴,Srivastava Avanish Kumar⁵³⁴,Haranath D.¹²³⁴⁵,Biradar Ashok M.¹²³⁴⁵

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR)

2. CSIR-National Physical Laboratory Campus

3. New Delhi-110012

4. India

5. CSIR-National Physical Laboratory

6. Department of Physics

7. Aligarh Muslim University

8. Aligarh-202002

9. The IIS University

Abstract

A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA04037C

Reference55 articles.

1. Digital memory device based on tobacco mosaic virus conjugated with nanoparticles

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5. Rewritable and shape-memory soft matter with dynamically tunable microchannel geometry in a biological temperature range

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