Inkjet-printed co-continuous mesoporous oxides for high-current power transistors-Reference-Cited by-同舟云学术

Inkjet-printed co-continuous mesoporous oxides for high-current power transistors

Published:2019 Issue:29 Volume:11 Page:13731-13740
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Devabharathi Nehru¹²³⁴,Mondal Sandeep Kumar¹²³⁴,Dasgupta Subho¹²³⁴^ORCID

Affiliation:

1. Department of Materials Engineering

2. Indian Institute of Science (IISc)

3. Bangalore 560012

4. India

Abstract

Inkjet-printed co-continuous mesoporous structures have been demonstrated for a large set of functional oxides. Channel-length-independent electronic transport was achieved when the mesoporous oxides were used to obtain printed, vertical edge FETs.

Funder

Science and Engineering Research Board

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR04876F

Reference68 articles.

1. Solution processed organic field-effect transistors and their application in printed logic circuits

2. All-Printed, Foldable Organic Thin-Film Transistors on Glassine Paper

3. All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

4. All ink-jet printed low-voltage organic field-effect transistors on flexible substrate

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