Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping

Abstract

Halide ion (Cl⁻/Br⁻/I⁻) aliovalently dopes on the Se²⁻sublattice and contributes one n-type carrier in AgBiSe₂, which gives rise to improved electronic transport properties. A peakZT, value of ∼0.9 at ∼810 K has been achieved for the AgBiSe_1.98Cl_0.02sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.