Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier-Reference-Cited by-同舟云学术

Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier

Published:2020 Issue:14 Volume:10 Page:8224-8232
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Tulić Semir¹²³⁴⁵,Waitz Thomas¹²³⁴⁵^ORCID,Romanyuk Oleksandr⁶⁷⁸⁹,Varga Marián⁶⁷⁸⁹,Čaplovičová Mária¹⁰¹¹¹²¹³,Habler Gerlinde¹⁴³⁴⁵^ORCID,Vretenár Viliam¹⁰¹¹¹²¹³,Kotlár Mário¹⁰¹¹¹²¹³,Kromka Alexander⁶⁷⁸⁹^ORCID,Rezek Bohuslav⁶⁷⁸⁹¹⁵,Skákalová Viera¹²³⁴⁵^ORCID

Affiliation:

1. Physics of Nanostructured Materials

2. Faculty of Physics

3. University of Vienna

4. 1090 Vienna

5. Austria

6. Institute of Physics

7. Czech Academy of Sciences

8. Prague 6

9. Czech Republic

10. Slovak University of Technology

11. Centre for Nanodiagnostics

12. 812 43 Bratislava

13. Slovakia

14. Department of Lithospheric Research

15. Faculty of Electrical Engineering

Abstract

Nanocrystalline diamond films grown on Si/native oxide substrates were subjected to Ni-mediated graphitization. Transmission electron microscopy study revealed crystals of NiSi₂ and SiC across the carbon/silicon interface in addition.

Funder

Austrian Science Fund

Agentúra na Podporu Výskumu a Vývoja

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA00809E

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