Band gap opening in stanene induced by patterned B–N doping
Author:
Affiliation:
1. Discipline of Chemistry
2. Indian Institute of Technology (IIT) Indore
3. Indore
4. India
5. Discipline of Metallurgy Engineering and Materials Science
Abstract
Stanene is a quantum spin Hall insulator and a promising material for electronic and optoelectronic devices.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CP/C6CP07505C
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