Trap states engineering toward all-inorganic CsPbBr<sub>3</sub>perovskite nanocrystals for highly efficient light-emitting diodes-Reference-Cited by-同舟云学术

Trap states engineering toward all-inorganic CsPbBr₃perovskite nanocrystals for highly efficient light-emitting diodes

Published:2023 Issue:29 Volume:11 Page:9996-10003
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jin Xudong¹,Miao Yanqin¹^ORCID,Dong Jianhua¹,Wang Jingkun¹,Lu Qiqing¹,Zhao Min¹²^ORCID,Xu Bingshe¹,Guo Junjie¹^ORCID

Affiliation:

1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan, Shanxi 030024, China

2. Aluminum-Magnesium Based New Material R&D Co., Ltd., Subsidiary of Xing Xian County Economic and Technological Development Zone, Xing Xian County, Shanxi 033699, China

Abstract

A trap states engineering strategy was reported for the preparation of high-quality CsPbBr3PeNCs using 4-dodecylbenzenesulfonic acid as the surface ligand, which could effectively reduce the trap states density and improve the device performance.

Funder

National Natural Science Foundation of China

Science and Technology Innovation Group of Shanxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00702B

Reference49 articles.

1. Metal halide perovskite nanocrystals and their applications in optoelectronic devices

2. All-Inorganic Metal Halide Perovskite Nanocrystals: Opportunities and Challenges