Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking-Reference-Cited by-同舟云学术

Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

Published:2021 Issue:12 Volume:9 Page:4307-4315
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Nguyen Tai¹²³⁴⁵^ORCID,Valle Nathalie¹²³⁴,Guillot Jérôme¹²³⁴,Bour Jérôme¹²³⁴,Adjeroud Noureddine¹²³⁴,Fleming Yves¹²³⁴^ORCID,Guennou Mael⁵⁶³⁴^ORCID,Audinot Jean-Nicolas¹²³⁴^ORCID,El Adib Brahime¹²³⁴,Joly Raoul¹²³⁴⁵,Arl Didier¹²³⁴^ORCID,Frache Gilles¹²³⁴,Polesel-Maris Jérôme¹²³⁴^ORCID

Affiliation:

1. Materials Research and Technology Department

2. Luxembourg Institute of Science and Technology

3. L-4422 Belvaux

4. Luxembourg

5. Department of Physics and Materials Science

6. University of Luxembourg

Abstract

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen ¹⁸O from the water precursor and oxygen ¹⁶O from the gas.

Funder

Fonds National de la Recherche Luxembourg

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05439A

Reference40 articles.

1. Recent Advances in ZnO-Based Light-Emitting Diodes

2. Nanocrystalline TiO2/ZnO Thin Films: Fabrication and Application to Dye-Sensitized Solar Cells

3. Chlorine Gas Sensing Performance of On-Chip Grown ZnO, WO3, and SnO2 Nanowire Sensors