Phonon dynamics in MoSi<sub>2</sub>N<sub>4</sub>: insights from DFT calculations-Reference-Cited by-同舟云学术

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Phonon dynamics in MoSi₂N₄: insights from DFT calculations

Published:2023 Issue:43 Volume:25 Page:29831-29841
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Oreshonkov A. S.¹²³^ORCID,Sukhanova E. V.¹⁴^ORCID,Popov Z. I.¹^ORCID

Affiliation:

1. Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia

2. Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia

3. School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia

4. Moscow Institute of Physics and Technology, Institutsky lane 9, Dolgoprudny, Moscow region, 141700, Russia

Abstract

Exploring Raman spectra and vibrational properties of possible α1, α2 and α3 MoSi2N4 polymorphs in monolayered, bilayered, and bulk geometries.

Funder

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02921B

Reference74 articles.

1. Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

2. Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

3. Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

4. Intercalated architecture of MA2Z4 family layered van der Waals materials with emerging topological, magnetic and superconducting properties

5. Strain‐Induced Magnetism in MSi 2 N 4 (M = V, Cr): A First‐Principles Study

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