Electronic structure and optical properties of graphene/stanene heterobilayer-Reference-Cited by-同舟云学术

Electronic structure and optical properties of graphene/stanene heterobilayer

Published:2016 Issue:24 Volume:18 Page:16302-16309
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Xianping¹²³⁴⁵,Meng Ruishen¹²³⁴,Jiang Junke⁵⁶⁷⁸⁹,Liang Qiuhua⁵⁶⁷⁸⁹,Yang Qun¹²³⁴,Tan Chunjian⁵⁶⁷⁸⁹,Sun Xiang¹²³⁴,Zhang Shengli¹⁰¹¹¹²¹³⁴,Ren Tianling¹⁴¹⁵¹⁶⁴

Affiliation:

1. Faculty of Electromechanical Engineering

2. Guilin University of Electronic Technology

3. 541004 Guilin

4. China

5. Key Laboratory of Optoelectronic Technology & Systems

6. Education Ministry of China

7. Chongqing University, and College of Opto-electronic Engineering

8. Chongqing University

9. 400044 Chongqing

10. Institute of Optoelectronics & Nanomaterials

11. College of Materials Science and Engineering

12. Nanjing University of Science and Technology

13. Nanjing 210094

14. Institute of Microelectronics

15. Tsinghua University

16. 100084 Beijing

Abstract

Bnd gap opening and enhanced optical performance are observed in the graphene/stanene heterobilayer.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP02424F

Reference59 articles.

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4. Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

5. Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

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