In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes-Reference-Cited by-同舟云学术

In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes

Published:2021 Issue:38 Volume:13 Page:16122-16130
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yan Yong¹^ORCID,Deng Qunrui¹,Li Shasha¹,Guo Tao²,Li Xueping¹^ORCID,Jiang Yurong¹^ORCID,Song Xiaohui¹,Huang Wen³,Yang Juehan⁴,Xia Congxin¹^ORCID

Affiliation:

1. School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China

2. Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3Ga, Canada

3. New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 2a0023, China

4. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China

Abstract

Few-layered GeS nanoflakes synthesized by a new post-thinning method show in-plane ferroelectric behaviour. The robust interfacial ferroelectricity in the GeS/InSe heterostructure yields a tunable photovoltaic performance.

Funder

National Natural Science Foundation of China

Henan Normal University

Foundation for Distinguished Young Scientists of Henan Polytechnic University

Science and Technology Innovation Talents in Universities of Henan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR03807A

Reference54 articles.