Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition

Author:

Ryu Jin Joo12,Jeon Kanghyoek1,Sohn Hyunchul2,Kim Gun Hwan1ORCID

Affiliation:

1. Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro Yuseong-Gu, Daejeon 34114, Republic of Korea

2. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea

Abstract

Multi-component chalcogenide thin films of GeTex and GeTexS1−x are prepared by atomic layer deposition technique. With the conformal deposition characteristics, its electrical properties of threshold switching are demonstrated for emerging computing.

Funder

National Research Foundation of Korea

Korea Research Institute of Chemical Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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