Composition-tunable 2D SnSe2(1−x)S2x alloys towards efficient bandgap engineering and high performance (opto)electronics-Reference-Cited by-同舟云学术

Composition-tunable 2D SnSe2(1−x)S2x alloys towards efficient bandgap engineering and high performance (opto)electronics

Published:2017 Issue:1 Volume:5 Page:84-90
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yan¹²³⁴⁵,Le Huang Le Huang¹²³⁴⁵,Li Bo¹²³⁴⁵,Shang Jimin¹²³⁴⁵,Xia Congxin⁶⁷⁸⁹,Fan Chao¹⁰¹¹¹²⁹,Deng Hui-Xiong¹²³⁴⁵,Wei Zhongming¹²³⁴⁵,Li Jingbo¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures

2. Institute of Semiconductors

3. University of Chinese Academy of Sciences

4. Chinese Academy of Sciences

5. Beijing 100083

6. Department of Physics

7. Henan Normal University

8. Xinxiang 453007

9. China

10. School of Electronics and Information Engineering

11. Hebei University of Technology

12. Tianjin 300401

Abstract

2D SnSe_2(1−x)S_2x (0 ≤ x ≤ 1) alloys with continuously tunable band gap range from 1.37 to 2.27 eV are systematically synthesized and utilized in high performance (opto)electronic devices.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC03751H

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