Ag-doped InP/ZnS quantum dots for type-I photosensitizers

Author:

Ren Can1,Hu Die2,Cui Yanyan1,Chen Peixian2,Xu Xiaoqian2,Cheng Jiaji3ORCID,He Tingchao1ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

2. Key Laboratory of Cell Biology, Ministry of Public Health and Key Laboratory of Medical Cell Biology, Ministry of Education, China Medical University, Shenyang 110122, China

3. School of Materials Science and Engineering, Hubei University, Wuhan 430062, China

Abstract

Ag-doping can efficiently enhance the multiphoton absorption and type-I photodynamic therapy efficiency of InP-based quantum dots.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Science and Technology Planning Project of Shenzhen Municipality

Department of Science and Technology of Liaoning Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

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