First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s-Reference-Cited by-同舟云学术

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Published:2024 Issue:35 Volume:16 Page:16467-16476
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Noh Tae Hyeon¹^ORCID,Chen Simin¹^ORCID,Kim Hyo-Bae²,Jin Taewon¹^ORCID,Park Seoung Min¹,An Seong Ui¹^ORCID,Sun Xinkai¹^ORCID,Kim Jaekyun¹,Han Jae-Hoon³,Ahn Ji-Hoon²^ORCID,Ahn Dae-Hwan³,Kim Younghyun¹

Affiliation:

1. Department of Photonics and Nanoelectronics, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Republic of Korea

2. Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, Republic of Korea

3. Korea Institute of Science and Technology, Seoul, Republic of Korea

Abstract

We successfully demonstrated a 2T0C-FeDRAM with a record-long multibit retention time exceeding 2000 seconds and 4-bit (19 states) capability, attributed to a VSN of 0 V leveraging the non-volatile properties of ferroelectrics.

Funder

National Research Foundation

Korea Institute for Advancement of Technology

Korea Basic Science Institute

Ministry of Education

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR02393E

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