High-pressure effects on the electronic properties and photoluminescence of Ag-doped CsCu<sub>2</sub>I<sub>3</sub>-Reference-Cited by-同舟云学术

High-pressure effects on the electronic properties and photoluminescence of Ag-doped CsCu₂I₃

Published:2024 Issue:30 Volume:26 Page:20348-20354
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Dou Zan¹,Lin Zhihua¹,Wang Rong²,Han Mengmeng³,Ding Jianxu⁴^ORCID,Wang Haoyu¹,Luo Xiaoguang¹,Cheng Yingchun²^ORCID,Han Nannan¹^ORCID

Affiliation:

1. Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China

2. Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China

3. China Petroleum Engineering & Construction Corp. North China Company, Middle Jianshe Road, Renqiu 062552, China

4. College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China

Abstract

The photoluminescence of 10% Ag-doped CsCu2I3 can be enhanced by hydrostatic pressure. The photoluminescence mechanism is defect states emission.

Funder

Key Research and Development Projects of Shaanxi Province

Natural Science Basic Research Program of Shaanxi Province

Northwestern Polytechnical University

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP01142B

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