Molecular insight into intrinsic-trap-mediated emission from atomically precise copper-based chalcogenide models

Author:

Xu Yi-Lei1,Ding Yayun2,Zhang Lin-Mei1ORCID,Ma Hao1,Liu Jia-Xing1,Zhang Jiaxu2,Zhou Rui13ORCID,Li Dong-Sheng4ORCID,Yuan Shang-Fu1ORCID,Wu Tao12ORCID

Affiliation:

1. College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, China

2. College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123, China

3. Department of Developmental and Regenerative Biology, Jinan University, Guangzhou 510632, China

4. College of Materials and Chemical Engineering, Hubei Provincial Collaborative Innovation Centre for New Energy Microgrid, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, China Three Gorges University, Yichang 443002, China

Abstract

Component-dependent trap sites in copper-related emission were studied using chalcogenide cluster models. In3+ ions in the clusters induce shallow-delocalized traps while Ga3+ ions are associated with carrier localization at deep-localized traps.

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

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