Modulation of electronic bandgaps and subsequent implications on SQ efficiencies <i>via</i> strain engineering in ultrathin SnX (X = S, Se) nanowires-Reference-Cited by-同舟云学术

Modulation of electronic bandgaps and subsequent implications on SQ efficiencies via strain engineering in ultrathin SnX (X = S, Se) nanowires

Published:2022 Issue:41 Volume:10 Page:15601-15612
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shukla Rishit S.¹^ORCID,Zala Vidit B.¹^ORCID,Gupta Sanjeev K.²^ORCID,Gajjar P. N.¹^ORCID

Affiliation:

1. Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380 009, India

2. Computational Materials and Nanoscience Group, Department of Physics, St. Xavier's College, Ahmedabad 380 009, India

Abstract

The SQ efficiencies of ultrathin SnX NWs can be fine-tuned via strain engineering. They are more suitable for photovoltaic applications under compressive strain due to their stability under the same. Ultrathin SnS ultrathin NW shows an ultrahigh electron mobility of 9.84 × 105 cm2 V−1 s−1.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

University Grants Commission

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03400J

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