Effective defect passivation of CsPbBr3 quantum dots using gallium cations toward the fabrication of bright perovskite LEDs-Reference-Cited by-同舟云学术

Effective defect passivation of CsPbBr3 quantum dots using gallium cations toward the fabrication of bright perovskite LEDs

Published:2021 Issue:34 Volume:9 Page:11324-11330
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Jiantai¹^ORCID,Xu Yushuai²³,Zou Shenghan¹,Pang Chao¹,Cao Ruimin¹,Pan Zhangxu¹,Guo Chan¹,Hu Shiben¹^ORCID,Liu Jiucheng¹,Xie Zhiyuan²³,Gong Zheng¹^ORCID

Affiliation:

1. Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, P. R. China

2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China

3. University of Science and Technology of China, Hefei, 230026, P. R. China

Abstract

Trivalent gallium cations are introduced to passivate the surface defects of the CsPbBr3 QDs. The resultant Ga-modified perovskite QDs are used to fabricate perovskite LEDs, which exhibit remarkably improved brightness and stability, compare with pristine QD-derived devices.

Funder

China Postdoctoral Science Foundation

Science and Technology Planning Project of Guangdong Province

Guangzhou Municipal Science and Technology Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01077H

Reference43 articles.

1. Metal Halide Perovskite Light‐Emitting Devices: Promising Technology for Next‐Generation Displays