Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as a photoelectrode
Author:
Affiliation:
1. Department of Photonics
2. National Cheng Kung University
3. Tainan City 70101
4. Taiwan
5. Department of Electro-Optical Engineering
6. Southern Taiwan University of Science and Technology
7. Tainan City 71001
Abstract
Selective-area Si implantation was performed on the surface of GaN films to form n+-GaN stripes for enhancing the production rate of hydrogen by photolysis of water.
Funder
Ministry of Science and Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TA/C7TA07155H
Reference22 articles.
1. A Realizable Renewable Energy Future
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4. Band-Edge Energies and Photoelectrochemical Properties of n-Type Al[sub x]Ga[sub 1−x]N and In[sub y]Ga[sub 1−y]N Alloys
5. Direct hydrogen gas generation by using InGaN epilayers as working electrodes
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