Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as a photoelectrode-Reference-Cited by-同舟云学术

Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as a photoelectrode

Published:2017 Issue:43 Volume:5 Page:22625-22630
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Sheu Jinn-Kong¹²³⁴^ORCID,Liao Po-Hsun¹²³⁴,Cheng Hsin-Yan¹²³⁴,Lee Ming-Lun⁵⁶⁷⁴

Affiliation:

1. Department of Photonics

2. National Cheng Kung University

3. Tainan City 70101

4. Taiwan

5. Department of Electro-Optical Engineering

6. Southern Taiwan University of Science and Technology

7. Tainan City 71001

Abstract

Selective-area Si implantation was performed on the surface of GaN films to form n⁺-GaN stripes for enhancing the production rate of hydrogen by photolysis of water.

Funder

Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TA/C7TA07155H

Reference22 articles.

1. A Realizable Renewable Energy Future

2. A review on solar-hydrogen/fuel cell hybrid energy systems for stationary applications

3. Electrochemical Photolysis of Water at a Semiconductor Electrode

4. Band-Edge Energies and Photoelectrochemical Properties of n-Type Al[sub x]Ga[sub 1−x]N and In[sub y]Ga[sub 1−y]N Alloys

5. Direct hydrogen gas generation by using InGaN epilayers as working electrodes

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