Reformation of La0.7Sr0.3MnO3 properties by using ZnO in La0.7Sr0.3MnO3-ZnO heterostructures grown on (001) oriented Si-Reference-Cited by-同舟云学术

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Reformation of La_0.7Sr_0.3MnO₃ properties by using ZnO in La_0.7Sr_0.3MnO₃-ZnO heterostructures grown on (001) oriented Si

Published:2024 Issue:2 Volume:16 Page:795-805
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Das Bibekananda¹,Padhan Prahallad¹²^ORCID

Affiliation:

1. Nanoscale Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India

2. Functional Oxides Research Group, Indian Institute of Technology Madras, Chennai 600036, India

Abstract

In (001)Si/La0.7Sr0.3MnO3(LSMO)/ZnO, the ZnO changes linear dI/dV vs. V of LSMO to parabolic, modifies different interactions and conduction electron concentration of t2g-state of Mn d-orbitals, and induces Fowler–Nordheim tunnelling around the TC.

Funder

Department of Science and Technology, Ministry of Science and Technology

Indian Institute of Technology Madras

Board of Research in Nuclear Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR04292H

Reference58 articles.

1. Positive colossal magnetoresistance from interface effect inp−njunction ofLa0.9Sr0.1MnO3andSrNb0.01Ti0.99O3

2. Time dependence of laser-induced thermoelectric voltages in La1−xCaxMnO3 and YBa2Cu3O7−δ thin films

3. Manganite-based heterojunction and its photovoltaic effects

4. Picosecond photoelectric characteristic in La0.7Sr0.3MnO3∕Si p-n junctions

5. Enhanced ferroelectricity in ultrathin films grown directly on silicon

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