Non-equilibrium diffusion of dark excitons in atomically thin semiconductors-Reference-Cited by-同舟云学术

Non-equilibrium diffusion of dark excitons in atomically thin semiconductors

Published:2021 Issue:47 Volume:13 Page:19966-19972
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Rosati Roberto¹^ORCID,Wagner Koloman²³^ORCID,Brem Samuel¹^ORCID,Perea-Causín Raül⁴^ORCID,Ziegler Jonas D.²³^ORCID,Zipfel Jonas²⁵^ORCID,Taniguchi Takashi⁶^ORCID,Watanabe Kenji⁷^ORCID,Chernikov Alexey²³^ORCID,Malic Ermin¹⁴^ORCID

Affiliation:

1. Department of Physics, Philipps-Universität Marburg, Renthof 7, D-35032 Marburg, Germany

2. Department of Physics, University of Regensburg, Regensburg D-93053, Germany

3. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany

4. Chalmers University of Technology, Department of Physics, 412 96 Gothenburg, Sweden

5. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

6. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-004, Japan

7. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-004, Japan

Abstract

Combining microscopic theory and spatiotemporal photoluminescence experiments we reveal an unconventional, time-dependent exciton diffusion in atomically thin semiconductors. This behavior originates from hot dark excitons with large excess energies.

Funder

Graphene Flagship

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Japan Science and Technology Corporation

Japan Society for the Promotion of Science

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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