A high-<i>T</i><sub>C</sub> heavy rare earth monoxide semiconductor TbO with a more than half-filled 4f orbital-Reference-Cited by-同舟云学术

A high-T_C heavy rare earth monoxide semiconductor TbO with a more than half-filled 4f orbital

Published:2022 Issue:43 Volume:51 Page:16648-16652
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Sasaki Satoshi¹^ORCID,Oka Daichi¹^ORCID,Kaminaga Kenichi²^ORCID,Saito Daichi¹,Yamamoto Taku¹,Abe Nobuto¹,Shimizu Hirokazu¹,Fukumura Tomoteru¹³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan

2. Department of Applied Chemistry, School of Engineering, Tohoku University, Sendai 980-8579, Japan

3. Advanced Institute for Materials Research (WPI-AIMR) and Core Research Cluster, Tohoku University, Sendai 980-8577, Japan

4. Center for Science and Innovation in Spintronics, Organization for Advanced Studies, Tohoku University, Sendai 980-8577, Japan

5. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

Abstract

A rock-salt structured terbium monoxide, TbO, was synthesized for the first time in the solid phase. This TbO is a high TC (231 K) ferromagnetic semiconductor, probably forming 4f and 5f magnetic sublattices at a single magnetic Tb2+ site.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D2DT02710K

Reference32 articles.

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