Thin film synthesis and properties of copper nitride, a metastable semiconductor-Reference-Cited by-同舟云学术

Thin film synthesis and properties of copper nitride, a metastable semiconductor

Published:2014 Issue:4 Volume:1 Page:424-430
ISSN:2051-6347
Container-title:Mater. Horiz.
language:en
Short-container-title:Mater. Horiz.

Author:

Caskey Christopher M.¹²³⁴²,Richards Ryan M.³⁴²,Ginley David S.¹²,Zakutayev Andriy¹²

Affiliation:

1. National Renewable Energy Laboratory

2. Golden, USA

3. Department of Chemistry and Geochemistry

4. Colorado School of Mines

Abstract

Copper nitride (Cu₃N) thin films were grown by reactive sputtering using a high-throughput combinatorial approach with orthogonal gradients of substrate temperature and target–substrate distance.

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/MH/C4MH00049H

Reference50 articles.

1. Deposition of crystalline binary nitride films of tin, copper, and nickel by reactive sputtering

2. Deposition and Characterization of Metastable Cu 3 N Layers for Applications in Optical Data Storage

3. Growth and properties of Cu3N films and Cu3N/γ′-Fe4N bilayers

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