Extremely suppressed thermal conductivity of large-scale nanocrystalline silicon through inhomogeneous internal strain engineering

Author:

Xu Bin12,Liao Yuxuan1,Fang Zhenglong1,Li Yifei1,Guo Rulei1,Nagahiro Ryohei1,Ikoma Yoshifumi3ORCID,Kohno Masamichi45ORCID,Shiomi Junichiro12ORCID

Affiliation:

1. Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

2. Institute of Engineering Innovation, The University of Tokyo, 2-11 Yayoi, Bunkyo, Tokyo 113-8656, Japan

3. Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan

4. Department of Mechanical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan

5. International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan

Abstract

Record low thermal conductivity was achieved in large-scale crystal silicon due to the effect of inhomogeneous internal strain-induced phonon engineering via HPT processing.

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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