Single crystal growth of bulk InGaZnO4 and analysis of its intrinsic transport properties-Reference-Cited by-同舟云学术

Single crystal growth of bulk InGaZnO4 and analysis of its intrinsic transport properties

Published:2019 Issue:19 Volume:21 Page:2985-2993
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Tanaka Yusuke¹²³⁴,Wada Kazuhiro¹²³⁴,Kobayashi Yuki¹²³⁴,Fujii Takenori⁵⁶⁷⁴^ORCID,Denholme Saleem J.¹²³⁴,Sekine Ryotaro¹²³⁴,Kase Naoki¹²³⁴,Kimizuka Noboru⁸⁹¹⁰¹¹,Miyakawa Nobuaki¹²³⁴^ORCID

Affiliation:

1. Department of Applied Physics

2. Tokyo University of Science

3. Tokyo 125-8585

4. Japan

5. Cryogenic Research Center

6. University of Tokyo

7. Tokyo 113-0032

8. Departamento de Investigación en Polímeros y Materiales

9. Universidad de Sonora

10. Rosales y Luis Encinas s/n, Hermosillo

11. Mexico

Abstract

Large, high-quality InGaZnO₄ single crystals grown by high-pressure optical floating zone method and its electrical and optical properties.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00007K

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3. The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C

4. Single-crystal growth of Bi2Sr2Ca2Cu3O10+δ (Bi-2223) by TSFZ method

5. Doping dependence of anisotropic resistivities in the trilayered superconductorBi2Sr2Ca2Cu3O10+δ

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