Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors
Author:
Affiliation:
1. King Abdullah University of Science and Technology (KAUST)
2. Physical Science and Engineering Division (PSE)
3. Thuwal 23955-6900
4. Saudi Arabia
Abstract
Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC04429H
Reference55 articles.
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5. M. S. Dresselhaus , G.Dresselhaus and P. C.Eklund, Science of fullerenes and carbon nanotubes, Academic Press, San Diego, 1996
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