Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides-Reference-Cited by-同舟云学术

Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides

Published:2017 Issue:1 Volume:19 Page:663-672
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wei Wei¹²³⁴⁵,Dai Ying¹²³⁴⁵,Huang Baibiao¹²³⁴⁵

Affiliation:

1. School of Physics

2. State Key Laboratory of Crystal Materials

3. Shandong University

4. Jinan 250100

5. China

Abstract

In 2D in-plane heterostructures of MoSe₂/MoS₂, MoS₂/MoSe₂, WSe₂/MoS₂ as well as MoS₂/WSe₂, intrinsic compressive or tensile strain is introduced due to lattice mismatch between two constituents, which significantly modifies the electronic properties, i.e., the straintronics.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C6CP07823K

Reference70 articles.

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5. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

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