Atomic layer deposition of Er-doped yttrium aluminum gallium garnet nanofilms with tunable crystallization and electroluminescence properties-Reference-Cited by-同舟云学术

Atomic layer deposition of Er-doped yttrium aluminum gallium garnet nanofilms with tunable crystallization and electroluminescence properties

Published:2023 Issue:21 Volume:52 Page:7311-7321
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Yu Zhimin¹,Yuan Kang¹,Yang Yang¹^ORCID,Sun Jiaming¹

Affiliation:

1. School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China

Abstract

Precise adjustment of Ga/Al ratios in Er-doped Y3(AlxGa1−x)5O12 nanolaminates realizes the regulation of crystallization temperature, correlated morphology and electroluminescence performance.

Funder

Fundamental Research Funds for the Central Universities

Natural Science Foundation of Tianjin City

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/DT/D3DT00827D

Reference59 articles.

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2. Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths

3. Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence

4. Si nanomebranes: Material properties and applications

5. Monolithic erbium- and ytterbium-doped microring lasers on silicon chips

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