Decoupling the metal–insulator transition temperature and hysteresis of VO<sub>2</sub> using Ge alloying and oxygen vacancies-Reference-Cited by-同舟云学术

Decoupling the metal–insulator transition temperature and hysteresis of VO₂ using Ge alloying and oxygen vacancies

Published:2022 Issue:46 Volume:58 Page:6586-6589
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Schofield Parker¹²,Braham Erick J.¹²^ORCID,Zhang Baiyu²,Andrews Justin L.¹²^ORCID,Drozdick Hayley K.¹,Zhao Dexin²^ORCID,Zaheer Wasif¹²,Gurrola Rebeca M.²,Xie Kelvin²,Shamberger Patrick J.²,Qian Xiaofeng²³,Banerjee Sarbajit¹²^ORCID

Affiliation:

1. Department of Chemistry, Texas A&M University, College Station, TX 77843, USA

2. Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA

3. Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA

Abstract

Ge alloying enables independent control of forward and reverse metal–insulator transitions in VO2, enabling decoupling of transformation-temperature and hysteresis.

Funder

Texas A and M University

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CC/D2CC01599D

Reference23 articles.

1. Building Brain-Inspired Logic Circuits from Dynamically Switchable Transition-Metal Oxides

2. Metallization of vanadium dioxide driven by large phonon entropy

3. Metal-Insulator Transition inVO2: ADFT+DMFTPerspective

4. Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

5. Challenges and Opportunities toward Real Application of VO2-Based Smart Glazing

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