Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing-Reference-Cited by-同舟云学术

Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing

Published:2021 Issue: Volume: Page:
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Bao Jusheng¹²³⁴⁵,Zeng Shaoyu¹²³⁴⁵,Dai Jie¹²³⁴⁵,Wang Xiaoshan⁶⁷⁸⁹⁵,Liu Qiang¹²³⁴⁵,Li Hai¹²³⁴⁵^ORCID,Huang Xiao¹²³⁴⁵^ORCID,Huang Wei¹²³⁴⁵

Affiliation:

1. Institute of Advanced Materials (IAM)

2. Nanjing Tech University (NanjingTech)

3. 30 South Puzhu Road

4. Nanjing

5. China

6. Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE)

7. Northwestern Polytechnical University (NPU)

8. 127 West Youyi Road

9. Xi’an 710072

Abstract

Pt₃Sn nanoparticles are in situ deposited on SnS₂ nanoplates to form heterostructures, which show promise as a selective NO₂ sensing material at room temperature.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Northwestern Polytechnical University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CC/D1CC00015B

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