Exciton–phonon coupling and power dependent room temperature photoluminescence of sulphur vacancy doped MoS2via controlled thermal annealing-Reference-Cited by-同舟云学术

Exciton–phonon coupling and power dependent room temperature photoluminescence of sulphur vacancy doped MoS2via controlled thermal annealing

Published:2020 Issue:36 Volume:12 Page:18899-18907
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Mastrippolito Dario¹²³⁴^ORCID,Palleschi Stefano¹²³⁴,D'Olimpio Gianluca¹²³⁴^ORCID,Politano Antonio¹²³⁴⁵^ORCID,Nardone Michele¹²³⁴,Benassi Paola¹²³⁴,Ottaviano Luca¹²³⁴⁶

Affiliation:

1. Dipartimento di Scienze Fisiche e Chimiche (DSFC)

2. Università dell'Aquila

3. 67100 L'Aquila

4. Italy

5. CNR-IMM Istituto per la Microelettronica e Microsistemi

6. CNR-SPIN UOS L'Aquila

Abstract

A direct investigation of the exciton–phonon coupling in 2D doped MoS₂ by means of power dependent photoluminescence and resonant Raman spectroscopy at room temperature.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR05229A

Reference56 articles.

1. Two-dimensional MoS2: Properties, preparation, and applications

2. Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films

3. Atomically Thin MoS2: A Versatile Nongraphene 2D Material

4. Synthesis, properties, and optoelectronic applications of two-dimensional MoS2 and MoS2-based heterostructures

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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