Controlling nanowire nucleation and growth with a negative substrate bias-Reference-Cited by-同舟云学术

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Controlling nanowire nucleation and growth with a negative substrate bias

Published:2016 Issue:16 Volume:18 Page:2913-2920
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Ball J.¹²,Reehal H. S.¹²

Affiliation:

1. London South Bank University - Engineering & Design

2. London SE1 0AA, UK

Abstract

Applying a voltage bias to silicon nanowires during growth can influence wire density, diameter and length.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CE/C6CE00403B

Reference53 articles.

1. Nanowire nanosensors

2. Silicon nanowire arrays as learning chemical vapour classifiers

3. Nanoelectronics-biology frontier: From nanoscopic probes for action potential recording in live cells to three-dimensional cyborg tissues

4. Nanowire-based single-cell endoscopy

5. High-performance Si microwire photovoltaics

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1. Theoretical Aspects of Point Defects in Semiconductor Nanowires;Fundamental Properties of Semiconductor Nanowires;2020-11-17

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