Band alignment type I, II transformations in Hf2CO2/MoS2 heterostructures using biaxial strain, external electric field, and interlayer coupling: a first principal investigation-Reference-Cited by-同舟云学术

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Band alignment type I, II transformations in Hf₂CO₂/MoS₂ heterostructures using biaxial strain, external electric field, and interlayer coupling: a first principal investigation

Published:2023 Issue:46 Volume:25 Page:32062-32070
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Sukhanova Ekaterina V.¹^ORCID,Popov Zakhar I.¹^ORCID

Affiliation:

1. Emanuel Institute of Biochemical Physics RAS, 119334, 4 Kosigin st., Moscow, Russia

Abstract

The transition to neuromorphic devices is relevant to the development of materials capable of providing electronic switching in response to external stimuli.

Funder

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP04546C

Reference68 articles.

1. Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

2. Heterojunction band offset engineering

3. Two-dimensional van der Waals heterostructures (vdWHs) with band alignment transformation in multi-functional devices

4. Electric field tuning of band offsets in transition metal dichalcogenides

5. Effects of Components Modulation on the Type of Band Alignments for PbI 2 /WS 2 van der Waals Heterostructure

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