Control of C3N4 and C4N3 carbon nitride nanosheets’ electronic and magnetic properties through embedded atoms-Reference-Cited by-同舟云学术

Control of C3N4 and C4N3 carbon nitride nanosheets’ electronic and magnetic properties through embedded atoms

Published:2020 Issue:4 Volume:22 Page:2249-2261
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Bafekry Asadollah¹²³⁴¹^ORCID,Stampfl Catherine⁵⁶⁷^ORCID,Akgenc Berna¹⁸⁹¹⁰^ORCID,Ghergherehchi Mitra¹¹¹²¹³¹⁴^ORCID

Affiliation:

1. Department of Physics

2. University of Guilan

3. Rasht

4. Iran

5. School of Physics

6. The University of Sydney

7. Australia

8. Kirklareli University

9. Kirklareli

10. Turkey

11. College of Electronic and Electrical Engineering

12. Sungkyunkwan University

13. Suwon

14. Korea

Abstract

In the present work, the effect of various embedded atom impurities on tuning electronic and magnetic properties of C₃N₄ and C₄N₃ nanosheets have been studied using first-principles calculations.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP06031F

Reference82 articles.

1. A tunable and sizable bandgap of a g-C3N4/graphene/g-C3N4 sandwich heterostructure: a van der Waals density functional study

2. Electric field improved the sensitivity of CO on substitutionally doped antimonene

3. Type-II InSe/g-C3N4 Heterostructure as a High-Efficiency Oxygen Evolution Reaction Catalyst for Photoelectrochemical Water Splitting

4. New 2D Carbon Nitride Organic Materials Synthesis with Huge-Application Prospects in CN Photocatalyst

5. Graphene-based electrochemical capacitors with integrated high-performance

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