Light-soaking effects and capacitance profiling in Cu(In,Ga)Se2 thin-film solar cells with chemical-bath-deposited ZnS buffer layers
Author:
Affiliation:
1. Kongju National University
2. 182 Shingwan-dong
3. Gongju-si
4. Republic of Korea
5. Electronics and Telecommunications Research Institute (ETRI)
6. 218 Gajeong-ro
7. Yuseong-gu
8. Korea University of Science and Technology (UST)
Abstract
The relationship between interfacial defects and the electronic properties of CIGS solar cells with ZnS buffer layers was analyzed by C–V measurements with laser illumination.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP05306H
Reference36 articles.
1. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%
2. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%
3. New reaction kinetics for a high-rate chemical bath deposition of the Zn(S,O) buffer layer for Cu(In,Ga)Se2-based solar cells
4. Characteristics of temperature and wavelength dependence of CuInSe2 thin-film solar cell with sputtered Zn(O,S) and CdS buffer layers
5. Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing
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