On the correctness of mathematical models of diffusion and cathodoluminescence-Reference-Cited by-同舟云学术

On the correctness of mathematical models of diffusion and cathodoluminescence

Published:2022-11-25 Issue:1 Volume:0 Page:81-100
ISSN:1729-3901
Container-title:TAURIDA JOURNAL OF COMPUTER SCIENCE THEORY AND MATHEMATICS
language:en
Short-container-title:

Author:

Turtin D.¹,Stepovich M²,Kalmanovich V²,Kartanov A.³

Affiliation:

1. Plekhanov Russian University of Economics

2. Tsiolkovsky Kaluga State University

3. Kaluga State University named after K.E. Tsiolkovsky

Abstract

Mathematical models of diﬀusion and cathodoluminescence of nonequilibrium minority charge carriers generated by a wide electron beam in homogeneous and multilayer semiconductor materials are considered. The use of wide electron beams makes it possible to reduce these problems to one–dimensional ones and to describe these mathematical models by ordinary diﬀerential equations.

Publisher

RIOR Publishing Center

Subject

General Medicine

Reference34 articles.

1. Бонч–Бруевич, В. Л., Калашников, С. Г. Физика полупроводников: Учебн. посо- бие для вузов. — М.: Наука, Главная редакция физ.–мат. литературы, 1990. — 685 с., BONCH–BRUEVICH,V.L., and KALASHNIKOV,S.G. (1990) The Physics of Semiconductors. Moscow: Nauka. 685 pp. (in Russian).

2. Панков Ж. Оптические процессы в полупроводниках. — М.: Мир, 1973. — 384 с., PANKOVE, J. I. (2010) Optical Processes in Semiconductors. Dover Publications; 2nd revised ed. 448 pp.

3. YACOBI, B. G., HOLT, D. B. (1990) Cathodoluminescence microscopy of inorganic solids. Plenum Press, New York. 354 pp., YACOBI, B. G., HOLT, D. B. (1990) Cathodoluminescence microscopy of inorganic solids. Plenum Press, New York. 354 pp.

4. Степович, М. А. Количественная катодолюминесцентная микроскопия прямозон- ных материалов полупроводниковой оптоэлектроники: Дис. ... д–ра физ.–мат. наук (01.04.07). — М.: Московский государственный технический университет им. Н.Э. Баумана, 2003. — 351 с, STEPOVICH, M. A. (2003) Quantitative Cathodoluminescent Microscopy of Direct– Gap Materials of Semiconductor Optoelectronics. Thesis Dr. Phys.–Math. Sci. Moscow: Bauman Moscow State Technical University. 351 pp. (in Russian).

5. Броудай, И., Мерей, Дж. Физические основы микротехнологии. — М.: Мир,1985. — 496 c., BRODIE, IVOR, MURAY, JULIUS J. (1982) The Physics of Microfabrication. Plenum Press, New York and London: SRI International (formerly Stanford Research Institute). 504 pp.