Si wafers having one- and two-dimensionally curved (111) planes examined by X-ray diffraction

Abstract

Si (111) wafers deformed at elevated temperatures into cylindrical or hemispherical shapes have been examined by X-ray diffraction. Well defined 333 peaks shifted with in-plane distance from the centre of the wafer as determined by ω scans. The shift of the peak position agreed with the curvature of the Si wafer, suggesting that the Si (111) lattice plane can be designed on an arbitrarily curved surface by this method. These crystals have potential for innovative applications in X-ray instrumentation, for both diffraction/scattering and spectroscopy.