Author:
Kopecký Miloš,Busetto Edoardo,Lausi Andrea,Šourek Zbyněk,Kub Jiří,Cukr Miroslav,Novák Vít,Olejník Kamil,Wright Jonathan P.
Abstract
The local atomic structure of a Ga1−xMnxAs (x= 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell.
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Cited by
1 articles.
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