Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline

Abstract

Synchrotron radiation total-reflection X-ray fluorescence (SR-TXRF) has been applied to the impurity analysis of Si wafers using a third-generation synchrotron radiation undulator source. A lower limit of detectability (LLD) for Ni atoms of 17 fg (1.7 × 108 atoms cm−2) has been achieved with an optical set-up based on an Si(111) double-crystal monochromator and a horizontal sample geometry. These first results are very promising for synchrotron radiation trace element analysis since we estimate that it is possible to lower the LLD by a factor of about 25 by employing appropriate optics and detectors. The use of a crystal monochromator opens new possibilities to perform absorption and scattering experiments (NEXAFS and X-ray standing-wave methods) for chemical and structural analysis of ultratrace elements.