Author:
Ofuchi H.,Kawamura D.,Tsuchiya J.,Matsubara N.,Tabuchi M.,Fujiwara Y.,Takeda Y.
Abstract
For understanding the luminescence of Er atoms in III–V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 × 1012 Er atoms in a 1.5 mm × 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 × 1012 atoms and 1.2 × 1013 atoms of Er.
Publisher
International Union of Crystallography (IUCr)
Subject
Instrumentation,Nuclear and High Energy Physics,Radiation
Cited by
11 articles.
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