XAFS studies of Al/TiNxfilms on Si(100) at the AlK- andL3,2-edge-Reference-Cited by-同舟云学术

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XAFS studies of Al/TiNxfilms on Si(100) at the AlK- andL3,2-edge

Published:1999-05-01 Issue:3 Volume:6 Page:524-525
ISSN:0909-0495
Container-title:Journal of Synchrotron Radiation
language:
Short-container-title:J Synchrotron Radiat

Author:

Zou Z.,Hu Y. F.,Sham T. K.,Huang H. H.,Xu G. Q.,Seet C. S.,Chan L.

Publisher

International Union of Crystallography (IUCr)

Subject

Instrumentation,Nuclear and High Energy Physics,Radiation

Link

http://journals.iucr.org/s/issues/1999/03/00/hf4353/hf4353.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing defect emissions in bulk, micro- and nano-sized α-Al2O3 via X-ray excited optical luminescence;The Journal of Chemical Physics;2013-02-28

2. Atomic and electronic structure of amorphous Al–Zr alloy films;Journal of Physics: Condensed Matter;2011-06-13

3. XRD and XANES study of reactions in particulate Al–Mg alloy composites;Canadian Metallurgical Quarterly;2011-01

4. Carbonate-induced structural perturbation of Al hydroxides;Clays and Clay Minerals;2009-12-01

5. Fourier filtration of XANES as a source of quantitative information of interatomic distances and coordination numbers in crystalline minerals and amorphous compounds;Physical Review B;2001-12-17

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