Determination of the photoelectron emission probability with inclined X-ray Laue diffraction

Abstract

A simple relation has been established between the Fourier component of the probability density P(z) of photoelectron emission from different depths of a crystal and the angular dependence of the emission of photoelectrons formed in inclined X-ray Laue diffraction, which for the first time permitted the use of a direct method for the reconstruction of the P(z) function. Accurate measurements of the angular dependence of photoelectron emission were carried out on a silicon single crystal with diffraction of Cu Kα radiation for different energy ranges. Photoelectrons were recorded by a proportional gas counter specially designed for the energy analysis of photoelectrons under inclined Laue diffraction conditions. The laws predicted by the theory have been fully confirmed, and the corresponding P(z) functions have been obtained.