Author:
Lu G.,Wen J. G.,Zhang W.,Wang R.
Abstract
The previously reported distorted zeroth-order fringes in a bright-field Tanaka pattern from a dislocated region in silicon have been computer simulated and the experimental and the many-beam calculated patterns agree well. Calculations are carried out for nine distinct cases of edge, screw and 60° dislocations in a silicon crystal. The general usefulness of the distortion of the ZOLZ pattern in determining geometrical properties of a dislocation is discussed.
Publisher
International Union of Crystallography (IUCr)
Cited by
9 articles.
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