Interpretation of the diffuse scattering close to Bragg peaks by X-ray topography

Abstract

Perturbations from crystal perfection will result in diffuse X-ray scattering, which can be imaged by topography to yield defect information without the swamping contribution of perfect-crystal scattering. This paper illustrates the importance of the probe shape for obtaining topographic images in this diffuse region not only to aid interpretation but to isolate the contributors to this scattering. The diffuse scattering in the vicinity of the Bragg peaks of GaAs, Si and Ge substrate crystals has been mapped to very high resolution and the diffuse scattering has been imaged by topography. It was found that the majority of the scattering emanates from surface damage and dislocations and not point defects or thermal diffuse scattering (TDS). These latter two components are found to be second-order effects in general and are only just discernable as a very weak background intensity in highly perfect crystals. This topography method is very sensitive to surface damage. This is because the associated diffuse scattering close to a Bragg peak can be used to form an image. Therefore, this relatively intense scattering provides a topograph within a few hours for assessing substrate-surface quality. The sensitivity of the method is illustrated with images of surface defects and dislocations in very perfect semiconductors. A procedure for measuring the diffuse scattering emanating from microdefects is also presented.