X-ray diffraction evidence for transient composition effects in MOVPE multilayer growth for Ga1−x
Al
x
As alloys
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Published:1987-06-01
Issue:3
Volume:20
Page:230-234
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ISSN:0021-8898
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Container-title:Journal of Applied Crystallography
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language:
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Short-container-title:J Appl Cryst
Author:
Bensoussan S.,Malgrange C.,Sauvage-Simkin M.,N'Guessan K.,Gibart P.
Abstract
X-ray rocking-curve analysis is applied to the detection of artifacts in multilayer epitactic growth of III–V ternary compounds by metal–organic vapour-phase epitaxy (MOVPE). Transient spikes in the composition result in unwanted additional thin layers whose presence disturbs the interference pattern expected from the designed heterostructures, thus modifying the oscillating part of the reflection profile. X-ray methods and secondary-ion mass spectroscopy (SIMS) lead to descriptions of the actual layer stacking in good agreement with each other.
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Cited by
15 articles.
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1. Dedication;Dynamical Theory of X-Ray Diffraction;2003-11-06
2. Useful formulae;Dynamical Theory of X-Ray Diffraction;2003-11-06
3. Dedication;Dynamical Theory of X-Ray Diffraction;2003-11-06
4. Preface;Dynamical Theory of X-Ray Diffraction;2003-11-06
5. Copyright Page;Dynamical Theory of X-Ray Diffraction;2003-11-06