A high-resolution diffuse X-ray scattering study of defects in dislocation-free silicon crystals grown by the float-zone method and comparison with Czochralski-grown crystals-Reference-Cited by-同舟云学术

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A high-resolution diffuse X-ray scattering study of defects in dislocation-free silicon crystals grown by the float-zone method and comparison with Czochralski-grown crystals

Published:1989-06-01 Issue:3 Volume:22 Page:209-215
ISSN:0021-8898
Container-title:Journal of Applied Crystallography
language:
Short-container-title:J Appl Cryst

Author:

Lal K.,Bhagavannarayana G.

Publisher

International Union of Crystallography (IUCr)

Subject

General Biochemistry, Genetics and Molecular Biology

Link

http://journals.iucr.org/j/issues/1989/03/00/gk0111/gk0111.pdf

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