Abstract
Use is made of the theory of dislocation-induced X-ray diffraction line broadening in the form presented by Krivoglaz, Martynenko & Ryaboshapka [Fiz. Metall. Metalloved. (1983), 55, 5–171 to express the so-called orientation factors occurring in the relations of diffraction profile parameters (e.g. Fourier coefficients, line widths) in a form which systematically takes into account both the lattice geometry and the elastic behaviour of the scattering crystals. The formalism can be used, in principle, for any materials and types of dislocations. In the case of elastically isotropic media the orientation factors can be described by analytical expressions. The application of the formalism is demonstrated in some detail for various slip systems in hexagonal polycrystals with random orientation of grains.
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Cited by
147 articles.
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