Microstructural and Compositional Characterisation of Electronic Materials
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Published:2016-06-28
Issue:4
Volume:66
Page:341
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ISSN:0976-464X
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Container-title:Defence Science Journal
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language:
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Short-container-title:Def. Sc. Jl.
Author:
Rao D.V. Sridhara,Sankarasubramanian R.,Kumar Deepak,Singh V.,Bhat K. Mahadeva,Mishra P.,Vinayak S.,Srinivasan T.,Tyagi R.,Muraleedharan K.,Muralidharan R.,Banerjee D.
Abstract
<p class="p1"> </p><p class="p2"><span class="s1"> </span>Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN, and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT), and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, <em>in-situ </em>SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.</p>
Publisher
Defence Scientific Information and Documentation Centre
Subject
Electrical and Electronic Engineering,Computer Science Applications,General Physics and Astronomy,Mechanical Engineering,Biomedical Engineering,General Chemical Engineering
Cited by
1 articles.
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